Title :
Integration of a plasma doping PULSION® process into a fully depleted SOI transistor flow chart
Author :
Duchaine, Julian ; Gonzatti, Frederic ; Torregrosa, Frank ; Etienne, Hasnaa ; Felch, Susan ; Milési, Frederic ; Yckache, Karim ; Spiegel, Yohann ; Claverie, Alain
Author_Institution :
Ion Beam Services, ZI Peynier Rousset, Peynier, France
Abstract :
In this paper we discuss the integration of plasma doping into a Fully Depleted SOI CMOS process flow (sub-10 nm top Si layer). The compatibility of PD with patterns (charging effects) has been studied as well as the Selective Epitaxial Growth (SEG) performed after the source/drain extension implantations to thicken these regions prior to silicidation.
Keywords :
CMOS integrated circuits; epitaxial growth; ion implantation; silicon-on-insulator; CMOS process flow; charging effects; fully depleted SOI transistor flow chart; plasma doping process; selective epitaxial growth; Doping; Implants; Ion implantation; Plasmas; Resists; Scanning electron microscopy; Silicon;
Conference_Titel :
Junction Technology (IWJT), 2011 11th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-61284-131-1
DOI :
10.1109/IWJT.2011.5970001
