Title :
Cold (−100°C) carbon co-implantation into high phosphorus doping source/drain extensions for aggressively scaled NFETs
Author :
Yako, Koichi ; Fujiwara, Makoto ; Bu, Huiming
Author_Institution :
Renesas Electron., Albany, NY, USA
Abstract :
A -100°C carbon co-implantation into phosphorus-doped source/drain extensions has been developed, providing for low junction leakage. NFETs made using cold carbon co-implantation and ultra-low energy phosphorus ion implantation showed high activation (Rs~ 500 ohm/sq) and sub-20 nm depth abrupt N+ junction.
Keywords :
field effect transistors; C; N+ junction; aggressive scaled NFET; cold carbon coimplantation; high phosphorus doping source-drain extension; size 20 nm; temperature -100 degC; Annealing; Boron; Carbon; Conferences; Implants; Junctions; Logic gates;
Conference_Titel :
Junction Technology (IWJT), 2011 11th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-61284-131-1
DOI :
10.1109/IWJT.2011.5970004
