Design of nitrogen ion-implantation layer on 4H silicon carbide p-type epilayer

The design method of nitrogen ion-implanted layer on 4H-SiC p-type epitaxial layer is presented, including the implantation does, energies, channel depth, and barrier layer thickness. The implantation layers are fabricated by three and four fold multiple energies nitrogen ion-implantations. SBDs, TLM structures and MESFETs are fabricated on the implanted layer. The characteristics of the ion implanted layers, Ohmic contacts, SBDs and MESFETs are gotten. The characteristics of the four fold implanted layer are better, which shows the implantation layer has the potential to be used to fabricate ion-implanted SiC devices in the future.