Title :
Cluster carbon implants — Cluster size and implant temperature effect
Author :
Sekar, Karuppanan ; Krull, Wade ; Current, Michael ; Onoda, Hiroshi ; Nakashima, Yoshiki ; Hamamoto, Nariaki ; Nagayama, Tsutomu
Author_Institution :
SemEquip Inc., North Billerica, MA, USA
Abstract :
In this paper we present results for amorphous layer thickness and interface roughness for various cluster carbon ions as well as monomer carbon implants for various doses implanted at different implant temperatures. The effect of cluster size, implant dose, implant dose rate and wafer implant temperatures are discussed based on Spectroscopic Ellipsometry, TEM and RBS/channeling techniques.
Keywords :
Rutherford backscattering; amorphous state; carbon; channelling; ellipsometry; interface roughness; ion implantation; semiconductor doping; thickness control; transmission electron microscopy; RBS technique; Si:C; TEM; amorphous interface; amorphous layer thickness; channeling technique; cluster carbon; cluster size; implant dose rate; monomer carbon implant; spectroscopic ellipsometry; temperature effect; wafer implant temperature; Atomic layer deposition; Carbon; Conferences; Implants; Ions; Junctions; Temperature measurement;
Conference_Titel :
Junction Technology (IWJT), 2011 11th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-61284-131-1
DOI :
10.1109/IWJT.2011.5970008
