Title :
Influence of surface passivation on B, B18H22 and B36H44 retained dose for USJ
Author :
Borland, John ; Buyuklimanli, Temel
Author_Institution :
J.O.B. Technol., St. Aiea, HI, USA
Abstract :
The authors conclude that the measured boron dose loss was not due to surface sputter etching but rather back-scattering for zero degree tilt implantation and reflection for 45 degree tilt implantation. Increase in surface oxide thickness by as much as 0.9nm was detected for molecular B-dopant species. Highest retained dose was observed with hydrogen surface passivation especially for monomer B implantation and decreases with increasing surface oxide thickness.
Keywords :
backscatter; boron; ion implantation; passivation; sputter etching; USJ; back-scattering; boron dose loss; hydrogen surface passivation; molecular B-dopant species; monomer B implantation; surface oxide thickness; surface sputter etching; zero degree tilt implantation; Boron; Implants; Junctions; Passivation; Silicon; Silicon germanium;
Conference_Titel :
Junction Technology (IWJT), 2011 11th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-61284-131-1
DOI :
10.1109/IWJT.2011.5970009
