• DocumentCode
    2543463
  • Title

    Influence of surface passivation on B, B18H22 and B36H44 retained dose for USJ

  • Author

    Borland, John ; Buyuklimanli, Temel

  • Author_Institution
    J.O.B. Technol., St. Aiea, HI, USA
  • fYear
    2011
  • fDate
    9-10 June 2011
  • Firstpage
    96
  • Lastpage
    99
  • Abstract
    The authors conclude that the measured boron dose loss was not due to surface sputter etching but rather back-scattering for zero degree tilt implantation and reflection for 45 degree tilt implantation. Increase in surface oxide thickness by as much as 0.9nm was detected for molecular B-dopant species. Highest retained dose was observed with hydrogen surface passivation especially for monomer B implantation and decreases with increasing surface oxide thickness.
  • Keywords
    backscatter; boron; ion implantation; passivation; sputter etching; USJ; back-scattering; boron dose loss; hydrogen surface passivation; molecular B-dopant species; monomer B implantation; surface oxide thickness; surface sputter etching; zero degree tilt implantation; Boron; Implants; Junctions; Passivation; Silicon; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology (IWJT), 2011 11th International Workshop on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-61284-131-1
  • Type

    conf

  • DOI
    10.1109/IWJT.2011.5970009
  • Filename
    5970009
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2543463