Title :
Study of multi-wavelength-excited photoluminescence on recrystallization of ultra-shallow implanted silicon
Author :
Okutani, Masashi ; Saikusa, Hiroki ; Takashima, Shuhei ; Yoshimoto, Masahiro ; Yoo, Woo Sik
Author_Institution :
Kyoto Inst. of Technol., Kyoto, Japan
Abstract :
In this report, the recrystallization process in a low-energy implanted pn junction during annealing was characterized by PL, with multi-wavelength excitation, to probe a region at a depth up to ~15 μm. Good correlation was demonstrated between sheet-resistance and PL intensity probing of the deep region beneath implanted layer.
Keywords :
annealing; elemental semiconductors; p-n junctions; photoluminescence; recrystallisation; silicon; PL intensity probing; Si; annealing; deep region; implanted layer; low-energy implanted pn junction; multiwavelength excitation; multiwavelength-excited photoluminescence; recrystallization process; sheet-resistance; ultra-shallow implanted silicon; Annealing; Electrical resistance measurement; Junctions; Probes; Raman scattering; Resistance; Wavelength measurement;
Conference_Titel :
Junction Technology (IWJT), 2011 11th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-61284-131-1
DOI :
10.1109/IWJT.2011.5970013
