DocumentCode
2543577
Title
Characterization of the 4Mb chalcogenide-random access memory
Author
Storey, Tom ; Hunt, Kenneth K. ; Graziano, Michael ; Li, Bin ; Bumgarner, Adam ; Rodgers, John ; Burcin, Laura
Author_Institution
BAE Syst., Manassas, VA
fYear
2005
fDate
10-10 Nov. 2005
Lastpage
104
Abstract
The first generation of C-RAM memory is designed to greatly exceed (in density, write speed, endurance) the existing non-volatile memory solutions for space and to close the gap that exists between system requirements and availability. Based on the success of the 64kb C-RAM program, a 4Mb C-RAM prototype has been designed and fabricated in 0.25 mum radiation-hardened CMOS. In this paper we present a description of the 4Mb design as well as results of recent characterization and radiation test of the first pass of prototype parts
Keywords
CMOS memory circuits; chalcogenide glasses; radiation hardening (electronics); random-access storage; 0.25 micron; 4 Mbyte; 64 kbyte; C-RAM memory; CMOS integrated circuits; chalcogenide-random access memory; nonvolatile memory; radiation hardening; CMOS technology; Circuit testing; Laboratories; Nonvolatile memory; Phase change memory; Prototypes; Radiation hardening; Solid state circuits; Telephony; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Non-Volatile Memory Technology Symposium, 2005
Conference_Location
Dallas, TX
Print_ISBN
0-7803-9408-9
Type
conf
DOI
10.1109/NVMT.2005.1541413
Filename
1541413
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