• DocumentCode
    2543594
  • Title

    Model of OFF-ON transition and SET process in phase-change memory

  • Author

    Savransky, Semyon D.

  • Author_Institution
    TRIZ Experts, Newark, CA
  • fYear
    2005
  • fDate
    10-10 Nov. 2005
  • Lastpage
    109
  • Abstract
    We discuss microscopic scenario of electron-driven OFF-ON transition that allows to explain many observed features of behavior of glassy chalcogenide alloys like Ge2Sb2Te5 . We show that SET process consists of collective re-arrangement of atoms and vacancies in such materials
  • Keywords
    antimony compounds; chalcogenide glasses; germanium compounds; phase change materials; random-access storage; Ge2Sb2Te5; OFF-ON transition model; SET process; atom collective re-arrangement; glass transition; glassy chalcogenide alloys; phase-change memory; vacancies; Charge carrier processes; Crystalline materials; Crystallization; Electron microscopy; Electron mobility; Glass; Phase change memory; Tellurium; Temperature; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Memory Technology Symposium, 2005
  • Conference_Location
    Dallas, TX
  • Print_ISBN
    0-7803-9408-9
  • Type

    conf

  • DOI
    10.1109/NVMT.2005.1541414
  • Filename
    1541414
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2543594