DocumentCode :
2543594
Title :
Model of OFF-ON transition and SET process in phase-change memory
Author :
Savransky, Semyon D.
Author_Institution :
TRIZ Experts, Newark, CA
fYear :
2005
fDate :
10-10 Nov. 2005
Lastpage :
109
Abstract :
We discuss microscopic scenario of electron-driven OFF-ON transition that allows to explain many observed features of behavior of glassy chalcogenide alloys like Ge2Sb2Te5 . We show that SET process consists of collective re-arrangement of atoms and vacancies in such materials
Keywords :
antimony compounds; chalcogenide glasses; germanium compounds; phase change materials; random-access storage; Ge2Sb2Te5; OFF-ON transition model; SET process; atom collective re-arrangement; glass transition; glassy chalcogenide alloys; phase-change memory; vacancies; Charge carrier processes; Crystalline materials; Crystallization; Electron microscopy; Electron mobility; Glass; Phase change memory; Tellurium; Temperature; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2005
Conference_Location :
Dallas, TX
Print_ISBN :
0-7803-9408-9
Type :
conf
DOI :
10.1109/NVMT.2005.1541414
Filename :
1541414
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2543594
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