Title :
Strong electron correlation effects in non-volatile electronic memory devices
Author :
Inou, Isao H. ; Rozenberg, M.J. ; Yasuda, S. ; Sanchez, M.J. ; Yamazaki, M. ; Manago, T. ; Akinaga, H. ; Takagi, H. ; Akoh, H. ; Tokura, Y.
Author_Institution :
Correlated Electron Res. Center, National Inst. of Adv. Ind. Sci. & Technol., Tsukuba
Abstract :
We propose a theoretical domain-tunneling (DT) model of the resistance switching phenomenon that is often experimentally observed in metal-semiconductor-metal sandwich structures which is considered as a possible non-volatile memory devices. The DT model is incorporated with a metal-insulator transition due to strong electron correlations at the semiconductor/metal interface. We have also prepared experimentally a Pt/NiO/Pt test device and have observed the resistance switching. The calculated results of the DT model are compared to the experimental results, manifesting that this sandwich structure could be the realisation of a novel strongly correlated electron device
Keywords :
metal-semiconductor-metal structures; random-access storage; semiconductor-metal boundaries; Pt-NiO-Pt; correlated electron device; domain-tunneling model; metal-insulator transition; metal-semiconductor-metal sandwich structures; nonvolatile electronic memory devices; resistance switching phenomenon; semiconductor-metal interface; Charge carrier density; Electric resistance; Electrons; Industrial electronics; Inorganic materials; Materials science and technology; Memory management; Metal-insulator structures; Nonvolatile memory; Sandwich structures;
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2005
Conference_Location :
Dallas, TX
Print_ISBN :
0-7803-9408-9
DOI :
10.1109/NVMT.2005.1541421
