Title :
3-dimensional analysis on the cell string current of NAND flash memory
Author :
Oh, H.-S. ; Lee, S.-C. ; Lee, C.S. ; Oh, D.-Y. ; Kim, T.-K. ; Song, J.-H. ; Lee, K.H. ; Park, Y.K. ; Choi, J.-H. ; Kong, J.-T.
Author_Institution :
Semicond. R&D Center, Memory Bus., Samsung Electron. Co., Ltd., Yongin
Abstract :
The cell string current of NAND flash memory is very small due to large resistance from the cells connected in series. In this paper, scaling effects on the cell current are analyzed for 70/60/50 nm NAND flash technologies using 3-dimensional TCAD simulation. The geometrical and process parameters are varied and their effects are quantified. It is identified that the coupling ratio has the most significant impact on the cell current and the LDD engineering is more relevant for higher cell current
Keywords :
NAND circuits; flash memories; 3D TCAD simulation; 50 nm; 60 nm; 70 nm; LDD engineering; NAND flash memory; cell string current; geometrical parameters; process parameters; Analytical models; Computational modeling; Computer aided engineering; Consumer electronics; Degradation; Flash memory; Nonvolatile memory; Research and development; Resistors; Voltage;
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2005
Conference_Location :
Dallas, TX
Print_ISBN :
0-7803-9408-9
DOI :
10.1109/NVMT.2005.1541422
