DocumentCode
2543764
Title
3-dimensional analysis on the cell string current of NAND flash memory
Author
Oh, H.-S. ; Lee, S.-C. ; Lee, C.S. ; Oh, D.-Y. ; Kim, T.-K. ; Song, J.-H. ; Lee, K.H. ; Park, Y.K. ; Choi, J.-H. ; Kong, J.-T.
Author_Institution
Semicond. R&D Center, Memory Bus., Samsung Electron. Co., Ltd., Yongin
fYear
2005
fDate
10-10 Nov. 2005
Lastpage
139
Abstract
The cell string current of NAND flash memory is very small due to large resistance from the cells connected in series. In this paper, scaling effects on the cell current are analyzed for 70/60/50 nm NAND flash technologies using 3-dimensional TCAD simulation. The geometrical and process parameters are varied and their effects are quantified. It is identified that the coupling ratio has the most significant impact on the cell current and the LDD engineering is more relevant for higher cell current
Keywords
NAND circuits; flash memories; 3D TCAD simulation; 50 nm; 60 nm; 70 nm; LDD engineering; NAND flash memory; cell string current; geometrical parameters; process parameters; Analytical models; Computational modeling; Computer aided engineering; Consumer electronics; Degradation; Flash memory; Nonvolatile memory; Research and development; Resistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Non-Volatile Memory Technology Symposium, 2005
Conference_Location
Dallas, TX
Print_ISBN
0-7803-9408-9
Type
conf
DOI
10.1109/NVMT.2005.1541422
Filename
1541422
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