DocumentCode :
2543892
Title :
Low noise, high linearity Gilbert cell transconductor
Author :
Khumsat, Phanumas ; Payne, Alison J.
Author_Institution :
Dept. of Electr. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
fYear :
1998
fDate :
36096
Firstpage :
42583
Lastpage :
815
Abstract :
This paper describes techniques to reduce the effects of parasitic emitter resistance in the Gilbert current gain-cell. The technique is further developed to be employed in a Gilbert cell transconductor (GCT), which offers improved characteristics in terms of linearity and noise performance over the conventional GCT. The deliberate addition of resistors to the gain-cell offers a better noise performance than that of the conventional GCT, while an improvement in linearity is achieved by using a transconductance summation technique to give an overall flatter response
Keywords :
circuit noise; Gilbert cell transconductor; Gilbert current gain cell; linearity; noise; parasitic emitter resistance; resistor; transconductance summation;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Analog Signal Processing (Ref. No. 1998/472), IEE Colloquium on
Conference_Location :
Oxford
Type :
conf
DOI :
10.1049/ic:19980850
Filename :
744723
Link To Document :
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