DocumentCode
2544067
Title
Progress in large-area CuInSe2 thin film modules
Author
Gay, R. ; Ermer, J. ; Fredric, C. ; Knapp, K. ; Pier, D. ; Jensen, C. ; Willett, D.
Author_Institution
Siemens Solar Ind., Camarillo, CA, USA
fYear
1991
fDate
7-11 Oct 1991
Firstpage
848
Abstract
Prototype modules of CuInSe2 (CIS) have been fabricated with efficiencies that exceed 10%. The challenge is to improve the processing yield of these modules to that suitable to advance to pilot manufacturing. A number of analytical tools have been developed to provide insight into the loss mechanisms in these large-area monolithic structures. Techniques for characterizing the adhesion of the semiconductors, the device quality, the interconnect quality, and the film uniformity are discussed. Improvements in adhesion have eliminated the primary cause of mechanical failure, leading to tighter module efficiency distributions
Keywords
adhesion; copper compounds; indium compounds; semiconductor thin films; solar cells; ternary semiconductors; CuInSe2 solar cells; adhesion; device quality; film uniformity; interconnect quality; large-area modules; loss mechanisms; mechanical failure; module efficiency distributions; monolithic structures; pilot manufacturing; thin film semiconductors; Adhesives; Apertures; Computational Intelligence Society; Fabrication; Short circuit currents; Solar energy; Testing; Transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location
Las Vegas, NV
Print_ISBN
0-87942-636-5
Type
conf
DOI
10.1109/PVSC.1991.169329
Filename
169329
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