DocumentCode :
2544067
Title :
Progress in large-area CuInSe2 thin film modules
Author :
Gay, R. ; Ermer, J. ; Fredric, C. ; Knapp, K. ; Pier, D. ; Jensen, C. ; Willett, D.
Author_Institution :
Siemens Solar Ind., Camarillo, CA, USA
fYear :
1991
fDate :
7-11 Oct 1991
Firstpage :
848
Abstract :
Prototype modules of CuInSe2 (CIS) have been fabricated with efficiencies that exceed 10%. The challenge is to improve the processing yield of these modules to that suitable to advance to pilot manufacturing. A number of analytical tools have been developed to provide insight into the loss mechanisms in these large-area monolithic structures. Techniques for characterizing the adhesion of the semiconductors, the device quality, the interconnect quality, and the film uniformity are discussed. Improvements in adhesion have eliminated the primary cause of mechanical failure, leading to tighter module efficiency distributions
Keywords :
adhesion; copper compounds; indium compounds; semiconductor thin films; solar cells; ternary semiconductors; CuInSe2 solar cells; adhesion; device quality; film uniformity; interconnect quality; large-area modules; loss mechanisms; mechanical failure; module efficiency distributions; monolithic structures; pilot manufacturing; thin film semiconductors; Adhesives; Apertures; Computational Intelligence Society; Fabrication; Short circuit currents; Solar energy; Testing; Transistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
Type :
conf
DOI :
10.1109/PVSC.1991.169329
Filename :
169329
Link To Document :
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