Parasitic BJT versus DIBL: Floating-body-related subthreshold characteristics of SOI NMOS device

Author

Lung, D.H. ; Hu, S.K. ; Kuo, J.B. ; Chen, D. ; Chen, Y.J.

Author_Institution

Dept. of Elec. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2014

fDate

10-12 Dec. 2014

Firstpage

412

Lastpage

415

Abstract

This paper reports the subthreshold characteristics of the SOI NMOS device considering the floating body effects. As verified by the experimentally measured data, as the channel length is scaled down from 1μm to 120nm, the subthreshold slope is steeper as a result of the dominance of the parasitic BJT in the thin film. For the channel length further scaled down to 60nm, its subthreshold behavior is less steep owing to the dominance of the DIBL effect in the MOS channel region and the shrunk parasitic BJT in the thin film as confirmed by the 2D hole concentration contours in the thin film and the conduction band potential distribution in the lateral channel region.

Keywords

MIS devices; bipolar transistors; silicon-on-insulator; thin films; 2D hole concentration contours; DIBL effect; MOS channel region; SOI NMOS device; conduction band potential distribution; floating-body-related subthreshold characteristics; lateral channel region; shrunk parasitic BJT; subthreshold slope; thin film; Educational institutions; Electric potential; Integrated circuits; Length measurement; MOS devices; Market research; Simulation; NMOS; SOI; subthreshold;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits (ISIC), 2014 14th International Symposium on

Conference_Location

Singapore

Type

conf

DOI

10.1109/ISICIR.2014.7029443

Filename

7029443