DocumentCode :
254427
Title :
The increase sensitivity of PNP-magnetotransistor in CMOS technology
Author :
Leepattarapongpan, C. ; Phetchakul, T. ; Pengpad, P. ; Srihapat, A. ; Jeamsaksiri, W. ; Chaowicharat, E. ; Hruanun, C. ; Poyai, A.
Author_Institution :
Dept. of Electron., King Mongkut´s Inst. of Technol. Ladkrabang, Bangkok, Thailand
fYear :
2014
fDate :
10-12 Dec. 2014
Firstpage :
420
Lastpage :
423
Abstract :
This paper presents improve sensitivity of pnp-magnetotransistor for detect vertical magnetic field response. The device structure consisted of one emitter, four collectors and four bases. The four collectors are separate to form four terminals. The same is true for the four bases. The experiment showed that, at 2 and 4mA of biasing current, magnetic field in BZ direction sensitivity within the range of 0-400 mT are 0.045 and 0.09 mV/mT in single mode. The sensitivity of merge mode are 0.15 and 0.3 mV/mT. The magnetic field response of merge mode shows 4-time increase of the magnetic field sensitivity comparative to single mode.
Keywords :
CMOS integrated circuits; magnetic fields; power transistors; CMOS technology; PNP-magnetotransistor; magnetic field sensitivity; vertical magnetic field response; CMOS integrated circuits; Magnetic fields; Magnetic flux; Magnetic sensors; Sensitivity; HALL Effect; Lorentz force; Magnetotransistor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuits (ISIC), 2014 14th International Symposium on
Conference_Location :
Singapore
Type :
conf
DOI :
10.1109/ISICIR.2014.7029448
Filename :
7029448
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=254427
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