Electrical behavior of chromium-contaminated EFG silicon

Author

Park, S.H. ; Schroder, D.K. ; Kalejs, J.P.

Author_Institution

Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA

fYear

1991

fDate

7-11 Oct 1991

Firstpage

864

Abstract

Edge-defined film-fed growth (EFG) Si was doped with Cr during crystal growth to determine the role of Cr on solar cell performance. It is found that Cr forms CrB pairs with boron at room temperature, and these pairs dissociate into Cr_i⁺ and B⁺ during anneals at 210°C for 10 min. After annealing, CrB pairs form again at room temperature with a time constant of 230 h. Both Cr and CrB are recombination centers, and the effectiveness of CrB pairs and Cr interstitials as recombination centers are compared. The Cr solid solubility in EFG Si at room temperature is around 10¹³ cm ^-3 for a doping concentration of 10¹⁶ cm^-3 calculated from the variation of the concentration of CrB pairs as a function of boron concentration

Keywords

boron; chromium; electron-hole recombination; elemental semiconductors; silicon; solar cells; Sr:Cr,B solar cells; crystal growth; doping concentration; edge-defined film-fed growth; electrical behaviour; interstitials; recombination centers; semiconductor; solid solubility; Boron; Chromium; Current measurement; Impurities; Length measurement; Photovoltaic cells; Silicon; Solids; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Conference_Location

Las Vegas, NV

Print_ISBN

0-87942-636-5

Type

conf

DOI

10.1109/PVSC.1991.169332

Filename

169332