Title :
Electrical behavior of chromium-contaminated EFG silicon
Author :
Park, S.H. ; Schroder, D.K. ; Kalejs, J.P.
Author_Institution :
Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA
Abstract :
Edge-defined film-fed growth (EFG) Si was doped with Cr during crystal growth to determine the role of Cr on solar cell performance. It is found that Cr forms CrB pairs with boron at room temperature, and these pairs dissociate into Cri+ and B+ during anneals at 210°C for 10 min. After annealing, CrB pairs form again at room temperature with a time constant of 230 h. Both Cr and CrB are recombination centers, and the effectiveness of CrB pairs and Cr interstitials as recombination centers are compared. The Cr solid solubility in EFG Si at room temperature is around 1013 cm -3 for a doping concentration of 1016 cm-3 calculated from the variation of the concentration of CrB pairs as a function of boron concentration
Keywords :
boron; chromium; electron-hole recombination; elemental semiconductors; silicon; solar cells; Sr:Cr,B solar cells; crystal growth; doping concentration; edge-defined film-fed growth; electrical behaviour; interstitials; recombination centers; semiconductor; solid solubility; Boron; Chromium; Current measurement; Impurities; Length measurement; Photovoltaic cells; Silicon; Solids; Temperature; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169332
