DocumentCode :
2544828
Title :
The influence of quantum-dash height on the differential gain and linewidth enhancement factor of InAs/InP quantum-dash lasers
Author :
Khan, Zahed M. ; Ng, Tien K. ; Schwingenschlögl, Udo ; Ooi, Boon S.
Author_Institution :
Div. of Phys. Sci. & Eng., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia
fYear :
2010
fDate :
19-21 Dec. 2010
Firstpage :
112
Lastpage :
114
Abstract :
We present a rate equation model for the analysis of static and dynamic characteristics of InAs/InP quantum-dash (Qdash) semiconductor laser. The model is applied to calculate the differential modal gain (DMG) and linewidth enhancement factor (LEF) of the Qdash laser. In addition, the effect of varying the Qdash height on these dynamic parameters is evaluated. The model predicts a decrease in the differential modal gain with increase in the Qdash height while the LEF value generally does not get affected. The LEF and DMG of the Qdash laser at peak gain attain a value of ~1-1.5 and ~0.6×10-15 -1.0×10-15 cm2, respectively.
Keywords :
III-V semiconductors; amplification; indium compounds; quantum dash lasers; differential modal gain; linewidth enhancement factor; quantum dash height; quantum dash lasers; semiconductor laser; Equations; Laser modes; Laser theory; Mathematical model; Photonics; Quantum dot lasers; LEF; Quantum-dash laser; differential gain; rate equations;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High-Capacity Optical Networks and Enabling Technologies (HONET), 2010
Conference_Location :
Cairo
Print_ISBN :
978-1-4244-9922-9
Type :
conf
DOI :
10.1109/HONET.2010.5715755
Filename :
5715755
Link To Document :
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