Distributed filter design on silicon CMOS

We report an investigation on the feasibility of developing distributed circuit elements and filters using standard complementary metal-oxide-silicon (CMOS) technologies. We propose to exploit the low loss interfacial polarisation propagating modes known to occur on multilayered substrates to realise a high effective substrate dielectric constant. Our approach allows the realisation of physically small but electrically large distributed circuit elements and filters on a standard CMOS substrate without recourse to high K materials