Design of high-sensitivity plasmonics-assisted GaAs metal-semiconductor-metal photodetectors

Author

Karar, Ayman ; Das, Narottam ; Tan, Chee Leong ; Alameh, Kamal ; Lee, Yong Tak

Author_Institution

Electron Sci. Res. Inst., Edith Cowan Univ., Joondalup, WA, Australia

fYear

2010

fDate

19-21 Dec. 2010

Firstpage

138

Lastpage

142

Abstract

In this paper, we use the finite difference timedomain (FDTD) method to optimize the light absorption of an ultrafast plasmonic GaAs metal-semiconductor-metal photodetector (MSM-PD) employing metal nano-gratings. The MSM-PD is optimized geometrically, leading to improved light absorption near the designed wavelength of GaAs through plasmon-assisted electric and magnetic field concentration through a subwavelength aperture. Simulation results show up to 10-times light absorption enhancement at 867 nm due to surface plasmon polaritons (SPPs) propagation through the metal nano-grating, in comparison to conventional MSM-PD.

Keywords

III-V semiconductors; finite difference time-domain analysis; gallium arsenide; light absorption; photodetectors; plasmonics; polaritons; surface plasmons; GaAs; finite difference time domain method; high-sensitivity plasmonics-assisted metal-semiconductor-metal photodetectors; light absorption; surface plasmon polaritons propagation; Absorption; Apertures; Gallium arsenide; Gratings; Metals; Nanoscale devices; Plasmons; FDTD simulation; MSM-PD; Subwavelength aperture; nanophotonics; plasmonic nanostructures; surface plasmon polaritons;

fLanguage

English

Publisher

ieee

Conference_Titel

High-Capacity Optical Networks and Enabling Technologies (HONET), 2010

Conference_Location

Cairo

Print_ISBN

978-1-4244-9922-9

Type

conf

DOI

10.1109/HONET.2010.5715761

Filename

5715761