Title :
Tunable semiconductor heterostructure slow light optical buffers
Author :
Uzian, Hassan Kaatu ; Kojori, Hossein Shokri ; Danaie, Mohammad
Author_Institution :
Dept. of Electr. Eng., Amirkabir Univ. of Technol., Tehran, Iran
Abstract :
This paper presents a novel method to tune the optical buffers center frequency, bandwidth and slow down factor. In this way, we consider the diamagnetic shift of exciton energy levels in quantum wells. Analysis and simulation of a basic GaAs/AlGaAs quantum wells optical buffer verifies the ability of this new method to control the frequency and time domain properties of an optical slow light device. Simulation shows that magnetic field intensity could increase the limited gigahertz bandwidth of this device up to 1 THz. These achievements are useful in optical nonlinearity enhancement and all-optical signal processing applications.
Keywords :
III-V semiconductors; aluminium compounds; diamagnetism; excitons; gallium arsenide; semiconductor quantum wells; slow light; GaAs-AlGaAs; all-optical signal processing; bandwidth; diamagnetic shift; down factor; exciton energy levels; magnetic field intensity; optical buffers center frequency; optical nonlinearity enhancement; optical slow light device; quantum wells optical buffer; tunable semiconductor heterostructure slow light optical buffers; Equations; Excitons; Magnetic fields; Mathematical model; Optical buffering; Resonant frequency; Slow light; Slow light; diamagnetic shift; exciton; semiconductor Heterostructure;
Conference_Titel :
High-Capacity Optical Networks and Enabling Technologies (HONET), 2010
Conference_Location :
Cairo
Print_ISBN :
978-1-4244-9922-9
DOI :
10.1109/HONET.2010.5715762