DocumentCode
2545010
Title
Tunable semiconductor heterostructure slow light optical buffers
Author
Uzian, Hassan Kaatu ; Kojori, Hossein Shokri ; Danaie, Mohammad
Author_Institution
Dept. of Electr. Eng., Amirkabir Univ. of Technol., Tehran, Iran
fYear
2010
fDate
19-21 Dec. 2010
Firstpage
143
Lastpage
146
Abstract
This paper presents a novel method to tune the optical buffers center frequency, bandwidth and slow down factor. In this way, we consider the diamagnetic shift of exciton energy levels in quantum wells. Analysis and simulation of a basic GaAs/AlGaAs quantum wells optical buffer verifies the ability of this new method to control the frequency and time domain properties of an optical slow light device. Simulation shows that magnetic field intensity could increase the limited gigahertz bandwidth of this device up to 1 THz. These achievements are useful in optical nonlinearity enhancement and all-optical signal processing applications.
Keywords
III-V semiconductors; aluminium compounds; diamagnetism; excitons; gallium arsenide; semiconductor quantum wells; slow light; GaAs-AlGaAs; all-optical signal processing; bandwidth; diamagnetic shift; down factor; exciton energy levels; magnetic field intensity; optical buffers center frequency; optical nonlinearity enhancement; optical slow light device; quantum wells optical buffer; tunable semiconductor heterostructure slow light optical buffers; Equations; Excitons; Magnetic fields; Mathematical model; Optical buffering; Resonant frequency; Slow light; Slow light; diamagnetic shift; exciton; semiconductor Heterostructure;
fLanguage
English
Publisher
ieee
Conference_Titel
High-Capacity Optical Networks and Enabling Technologies (HONET), 2010
Conference_Location
Cairo
Print_ISBN
978-1-4244-9922-9
Type
conf
DOI
10.1109/HONET.2010.5715762
Filename
5715762
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