• DocumentCode
    2545010
  • Title

    Tunable semiconductor heterostructure slow light optical buffers

  • Author

    Uzian, Hassan Kaatu ; Kojori, Hossein Shokri ; Danaie, Mohammad

  • Author_Institution
    Dept. of Electr. Eng., Amirkabir Univ. of Technol., Tehran, Iran
  • fYear
    2010
  • fDate
    19-21 Dec. 2010
  • Firstpage
    143
  • Lastpage
    146
  • Abstract
    This paper presents a novel method to tune the optical buffers center frequency, bandwidth and slow down factor. In this way, we consider the diamagnetic shift of exciton energy levels in quantum wells. Analysis and simulation of a basic GaAs/AlGaAs quantum wells optical buffer verifies the ability of this new method to control the frequency and time domain properties of an optical slow light device. Simulation shows that magnetic field intensity could increase the limited gigahertz bandwidth of this device up to 1 THz. These achievements are useful in optical nonlinearity enhancement and all-optical signal processing applications.
  • Keywords
    III-V semiconductors; aluminium compounds; diamagnetism; excitons; gallium arsenide; semiconductor quantum wells; slow light; GaAs-AlGaAs; all-optical signal processing; bandwidth; diamagnetic shift; down factor; exciton energy levels; magnetic field intensity; optical buffers center frequency; optical nonlinearity enhancement; optical slow light device; quantum wells optical buffer; tunable semiconductor heterostructure slow light optical buffers; Equations; Excitons; Magnetic fields; Mathematical model; Optical buffering; Resonant frequency; Slow light; Slow light; diamagnetic shift; exciton; semiconductor Heterostructure;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High-Capacity Optical Networks and Enabling Technologies (HONET), 2010
  • Conference_Location
    Cairo
  • Print_ISBN
    978-1-4244-9922-9
  • Type

    conf

  • DOI
    10.1109/HONET.2010.5715762
  • Filename
    5715762