• DocumentCode
    2545012
  • Title

    Engineering wafers for the nanotechnology era

  • Author

    Mazuré, Carlos ; Auberton-Hervé, André-Jacques

  • Author_Institution
    SOITEC, Crolles, France
  • fYear
    2005
  • fDate
    12-16 Sept. 2005
  • Firstpage
    29
  • Lastpage
    38
  • Abstract
    Nanotechnology starts at the substrate level. Engineered substrate is one of the most important innovations of the nanotechnology era driven by the vanishing boundary between substrate design and device architecture. SOI substrates, the first engineered substrate of its kind, have made possible an efficient optimization of MOSFET current drive while minimizing the leakage and reducing parasitic elements, thus enhancing the overall IC performance. Strained silicon, hybrid orientation SOI, and germanium on insulator have all added new handles to traditional scaling to further improve device and IC performance. An overview of the advances in Smart Cut engineered substrates and the impact on device performance will be given.
  • Keywords
    MOSFET; elemental semiconductors; germanium; integrated circuit technology; nanotechnology; optimisation; semiconductor technology; silicon; silicon-on-insulator; substrates; Ge; IC performance enhancement; MOSFET current drive; SOI substrates; Si; Smart Cut engineered substrates; engineering wafers; germanium on insulator; hybrid orientation SOI; leakage minimization; nanotechnology; parasitic element reduction; strained silicon; substrate design; Capacitive sensors; FinFETs; Impedance; Logic devices; MOSFET circuits; Nanotechnology; Power engineering and energy; Radio frequency; Silicon on insulator technology; Technological innovation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European
  • Print_ISBN
    0-7803-9205-1
  • Type

    conf

  • DOI
    10.1109/ESSCIR.2005.1541554
  • Filename
    1541554