DocumentCode :
2545012
Title :
Engineering wafers for the nanotechnology era
Author :
Mazuré, Carlos ; Auberton-Hervé, André-Jacques
Author_Institution :
SOITEC, Crolles, France
fYear :
2005
fDate :
12-16 Sept. 2005
Firstpage :
29
Lastpage :
38
Abstract :
Nanotechnology starts at the substrate level. Engineered substrate is one of the most important innovations of the nanotechnology era driven by the vanishing boundary between substrate design and device architecture. SOI substrates, the first engineered substrate of its kind, have made possible an efficient optimization of MOSFET current drive while minimizing the leakage and reducing parasitic elements, thus enhancing the overall IC performance. Strained silicon, hybrid orientation SOI, and germanium on insulator have all added new handles to traditional scaling to further improve device and IC performance. An overview of the advances in Smart Cut engineered substrates and the impact on device performance will be given.
Keywords :
MOSFET; elemental semiconductors; germanium; integrated circuit technology; nanotechnology; optimisation; semiconductor technology; silicon; silicon-on-insulator; substrates; Ge; IC performance enhancement; MOSFET current drive; SOI substrates; Si; Smart Cut engineered substrates; engineering wafers; germanium on insulator; hybrid orientation SOI; leakage minimization; nanotechnology; parasitic element reduction; strained silicon; substrate design; Capacitive sensors; FinFETs; Impedance; Logic devices; MOSFET circuits; Nanotechnology; Power engineering and energy; Radio frequency; Silicon on insulator technology; Technological innovation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European
Print_ISBN :
0-7803-9205-1
Type :
conf
DOI :
10.1109/ESSCIR.2005.1541554
Filename :
1541554
Link To Document :
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