Title :
A 2.5-GHz band low-voltage high efficiency class-E power amplifier IC with body effect
Author :
Kurniawan, T.A. ; Xin Yang ; Xiao Xu ; Zheng Sun ; Yoshimasu, T.
Author_Institution :
Grad. Sch. of Inf., Production & Syst. Waseda Univ. Kitakyushu-City, Kitakyushu, Japan
Abstract :
This paper presents a fully integrated class-E power amplifier IC with body effect to achieve high efficiency and high gain at low supply voltage for 2.5-GHz band short range wireless communication systems. The class-E amplifier IC is designed, fabricated and fully evaluated in 180-nm CMOS. The proposed power amplifier IC exhibits a small-signal gain of 10.8 dB and a saturated output power of 10.8 dBm with a drain efficiency of 35.0 % at a supply voltage of only 1-V.
Keywords :
CMOS integrated circuits; microwave power amplifiers; CMOS; body effect; complementary metal oxide semiconductor; drain efficiency; efficiency 35 percent; frequency 2.5 GHz; gain 10.8 dB; low-voltage high efficiency class-E power amplifier IC; short range wireless communication system; size 180 nm; small-signal gain; voltage 1 V; CMOS integrated circuits; Gain; Logic gates; Power amplifiers; Power generation; Voltage measurement; 180-nm CMOS; 2.5-GHz band; body effect; class-E amplifier IC;
Conference_Titel :
Integrated Circuits (ISIC), 2014 14th International Symposium on
Conference_Location :
Singapore
DOI :
10.1109/ISICIR.2014.7029483
