Porous and RF sputtering InP for portable THz-TDS in pharmaceutical and medical applications

Author

Sirbu, Lilian ; Ghimpu, Lidia ; Danila, M. ; Muller, Rudolf ; Matei, Adriana ; Comanescu, F. ; Ionescu, Adrian Mihai ; Grigore, Oana ; Dascalu, T. ; Sarua, Andrei

Author_Institution

Inst. of Electron. Eng. & Nanotechnol. “D. Ghitu”, Chisinau, Moldova

Volume

1

fYear

2013

fDate

14-16 Oct. 2013

Firstpage

69

Lastpage

72

Abstract

We developed a technology for deposition of metal contacts/wires upon nanoporous InP thin film structures and RF sputtered InP films. Indium phosphide (InP) films were deposited onto glass substrate using RF magnetron sputtering by varying the substrate temperature (50-100°C), under constant argon pressure (6.3·10^-3 Bar) and RF power (40-100 W).

Keywords

III-V semiconductors; glass; indium compounds; nanoporous materials; porous semiconductors; semiconductor thin films; sputter deposition; terahertz waves; InP; RF magnetron sputtering; RF sputtering; THz TDS; glass substrate; medical applications; metal contacts; nanoporous thin film structures; pharmaceutical applications; power 40 W to 100 W; substrate temperature; temperature 50 degC to 100 degC; wires; Antennas; Films; Indium phosphide; Laser beams; Radio frequency; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2013 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4673-5670-1

Electronic_ISBN

1545-827X

Type

conf

DOI

10.1109/SMICND.2013.6688092

Filename

6688092