A PMOS-switch based charge pump, allowing lost cost implementation on a CMOS standard process

Author

Racapé, Emmanuel ; Daga, Jean-Michel

Author_Institution

Embedded Non Volatile Memory group, Atmel Rousset, France

fYear

2005

fDate

12-16 Sept. 2005

Firstpage

77

Lastpage

80

Abstract

A 4-phase charge pump based on the low-voltage PMOS switching circuitry has been implemented in a 0.18μm CMOS standard process, without any additional masking and process steps. The use of low-voltage PMOS switches overcomes the intrinsic limitations of high voltage NMOS devices such as: poor drive, large parasitic capacitance, threshold voltage sensitivity to body bias and temperature. Using the proposed circuitry, up to 14v output voltage has been measured on a 11-stage implementation powered at 1.2v, resulting in 97% of Vdd average gain per stage with capacitive loading only. In addition, nearly temperature independent efficiency of 53% has been measured on an extended Vdd range, for different current loads.

Keywords

CMOS analogue integrated circuits; charge injection; low-power electronics; switching circuits; voltage multipliers; 0.18 micron; 1.2 V; 14 V; 4-phase charge pump; CMOS process; low-voltage PMOS switching circuitry; CMOS process; Charge pumps; Costs; MOS devices; Parasitic capacitance; Switches; Switching circuits; Temperature sensors; Threshold voltage; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European

Print_ISBN

0-7803-9205-1

Type

conf

DOI

10.1109/ESSCIR.2005.1541562

Filename

1541562