DC — 15 GHz CMOS SP8T switches using defected ground structure low pass filter

In this paper, we present a novel concept to design single-pole eight-throw (SP8T) switch using a defected ground structure low pass filter (DGS LPF). The DGS LPF produces an enhanced inductance to compensate the parasitic capacitances of the control transistors. As a result, the SP8T switch will consume much less silicon area. The total areas and active areas of the SP8T switches are less than 860 × 460 μm² and 425 × 165 μm² respectively. The concept is validated with post layout simulation results of three SP8T switches in a 65-nm CMOS.