DC — 15 GHz CMOS SP8T switches using defected ground structure low pass filter

Author

Apriyana, A.A.A. ; Zhang Yue Ping

Author_Institution

Nanyang Technol. Univ., Singapore, Singapore

fYear

2014

fDate

10-12 Dec. 2014

Firstpage

536

Lastpage

539

Abstract

In this paper, we present a novel concept to design single-pole eight-throw (SP8T) switch using a defected ground structure low pass filter (DGS LPF). The DGS LPF produces an enhanced inductance to compensate the parasitic capacitances of the control transistors. As a result, the SP8T switch will consume much less silicon area. The total areas and active areas of the SP8T switches are less than 860 × 460 μm² and 425 × 165 μm² respectively. The concept is validated with post layout simulation results of three SP8T switches in a 65-nm CMOS.

Keywords

CMOS integrated circuits; defected ground structures; field effect MMIC; low-pass filters; microwave filters; microwave switches; CMOS SP8T switches; DGS LPF; control transistors; defected ground structure low pass filter; enhanced inductance; frequency 0 GHz to 15 GHz; parasitic capacitance compensation; post layout simulation; single-pole eight-throw switch design; size 65 nm; Bandwidth; CMOS integrated circuits; Current density; Current distribution; Insertion loss; Ports (Computers); Topology; DGS LPF; HFSS; SP8T; SPMT; Switch;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits (ISIC), 2014 14th International Symposium on

Conference_Location

Singapore

Type

conf

DOI

10.1109/ISICIR.2014.7029488

Filename

7029488