An SOI-CMOS low noise chopper amplifier for high temperature applications

Author

Yejin Chen ; Goh Wang Ling ; Jun Yu ; Arasu, M.A.

Author_Institution

Nanyang Technol. Univ., Singapore, Singapore

fYear

2014

fDate

10-12 Dec. 2014

Firstpage

240

Lastpage

243

Abstract

This paper presents the principle and design of an SOI-CMOS low noise chopper amplifier for electronic data acquisition system in down-hole-drilling application that operates at the high temperature (>170 °C) regime. The chopper amplifier is designed to have three-stages where the first stage is a folded cascade. A commercially available 1-μm SOI-CMOS technology was chosen. Simulations showed that the input-referred noise of the chopper amplifier is about 25.6 nV/sqrt(Hz) at 700 Hz with a total current consumption of 5.496 mA. Measurements proved that the chopper amplifier is able to work up to 300 °C.

Keywords

CMOS analogue integrated circuits; choppers (circuits); data acquisition; drilling (geotechnical); elemental semiconductors; high-temperature electronics; low noise amplifiers; silicon-on-insulator; SOI-CMOS low-noise chopper amplifier; SOI-CMOS technology; Si; current 5.496 mA; down-hole-drilling application; electronic data acquisition system; frequency 700 Hz; high-temperature application; size 1 mum; Choppers (circuits); Current measurement; Noise; Ocean temperature; Receivers; Telemetry; Temperature measurement; SOI-CMOS; chopper amplifier; high temperature electronics; low noise amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits (ISIC), 2014 14th International Symposium on

Conference_Location

Singapore

Type

conf

DOI

10.1109/ISICIR.2014.7029493

Filename

7029493