Title :
24 GHz LNA in 90nm RF-CMOS with high-Q above-IC inductors
Author :
Dupuis, Olivier ; Sun, Xiao ; Carchon, Geert ; Soussan, Philippe ; Ferndahl, Mattias ; Decoutere, Stefaan ; De Raedt, Walter
Author_Institution :
Inter-Univ. Micro-Electron. Center, Leuven, Belgium
Abstract :
K-band RF capabilities of 90nm RF-CMOS combined with thin-film above-IC high-Q inductors is assessed by means of a 24 GHz LNA. The LNA, implemented as a single stage common-source amplifier led to state-of-the art results for CMOS technology at 24 GHz. Record noise figure of 3.2 dB is obtained with a gain of 7.5 dB. Input and output matching are respectively -16 dB and -30 dB. The LNA works with a 1V supply voltage and consumes only 10.6 mA.
Keywords :
CMOS analogue integrated circuits; low noise amplifiers; microwave amplifiers; microwave integrated circuits; thin film inductors; 1 V; 10.6 mA; 24 GHz; 3.2 dB; 7.5 dB; 90 nm; RF-CMOS low noise amplifier; single stage common-source amplifier; thin film high-Q above-IC inductors; Art; CMOS technology; Gain; Impedance matching; K-band; Noise figure; Radio frequency; Radiofrequency amplifiers; Thin film inductors; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European
Print_ISBN :
0-7803-9205-1
DOI :
10.1109/ESSCIR.2005.1541565
