DocumentCode
254532
Title
CMOS image sensor based physical unclonable function for smart phone security applications
Author
Yuan Cao ; Zalivaka, S.S. ; Le Zhang ; Chip-Hong Chang ; Shoushun Chen
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear
2014
fDate
10-12 Dec. 2014
Firstpage
392
Lastpage
395
Abstract
Recent years have seen the rapid growing market of smart phones. At the same time, pirated, knockoff or refurnished phones have also flooded into the worldwide market and inflicted great loss on the mobile phone industry. Existing anti-counterfeiting, authentification and identification methods, which rely on the verification of the IDs stored in the phone memory, are vulnerable to attack. This paper presents a new CMOS image sensor based physical unclonable function (PUF) for smart phone identification and anti-counterfeiting. The proposed PUF exploits the intrinsic imperfection during the image sensor manufacturing process to generate the unique signatures. With the proposed differential readout algorithm for the pixels of the fixed pattern noise, the effects of power supply and temperature variations are suppressed. Simulations on a typical 3-T CMOS image sensor in GF 65nm CMOS technology show that the proposed PUF can generate robust and reliable challenge-response pairs with an uniqueness of 50.12% and a reliability of 100% at temperature varying from 0°C to 100°C and supply voltage variation of ±16.7%.
Keywords
CMOS image sensors; data privacy; identification; integrated circuit noise; integrated circuit reliability; readout electronics; smart phones; telecommunication security; 3-T CMOS image sensor; GF CMOS technology; PUF; anticounterfeiting method; authentification method; differential readout algorithm; fixed pattern noise; identification method; image sensor manufacturing process; mobile phone industry; phone memory; physical unclonable function; power supply effect; reliability; signature generation; size 65 nm; smart phone security application; temperature 0 degC to 100 degC; CMOS image sensors; Noise; Reliability; Security; Smart phones; Transistors; CMOS image sensor; Physical Unclonable Function; process variation; smart phone anti-counterfeiting;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Circuits (ISIC), 2014 14th International Symposium on
Conference_Location
Singapore
Type
conf
DOI
10.1109/ISICIR.2014.7029496
Filename
7029496
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