• DocumentCode
    2545440
  • Title

    Improvement of silicon nitride solar cells after thermal processing gettering or passivation

  • Author

    Muller, J.C. ; Hartiti, B. ; Hussian, E. ; Schunck, J.P. ; Siffert, P. ; Sarti, D.

  • Author_Institution
    CRN, Lab. PHASE, Strasbourg, France
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    883
  • Abstract
    Experiments carried out by RF glow discharge on phosphorus-diffused N+P junctions have shown that hydrogen neutralization only takes place in the 300-400°C temperature range. The observed increase of the bulk diffusion length LD is completely lost if post annealing is performed at temperatures higher than the stability of hydrogen bonds with defects or impurities (i.e., 450-500°C). However, some LD improvement reappears for temperatures higher than 650°C which is probably correlated with an enhancement of the phosphorus gettering
  • Keywords
    diffusion in solids; getters; passivation; semiconductor materials; silicon compounds; solar cells; SiN solar cells; bulk diffusion length; passivation; post annealing; thermal processing gettering; Annealing; Gettering; Glow discharges; Hydrogen; Impurities; Photovoltaic cells; Radio frequency; Silicon; Stability; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169336
  • Filename
    169336
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2545440