Title :
Transcalent solid statepower devices
Author :
Mckechnie, R.M. ; Kessler, S.W.
Author_Institution :
USAMERDC, Fort Belvoir, VA, USA
Abstract :
The design and testing of Transcalent Solid State Power Devices are described. In a Transcalent Device the active element is made an integral part of two heat pipes. Thus the mechanical and thermal barriers between the silicon and the heat rejection surfaces are eliminated. Discussed will be the operational characteristics of the Transcalent Devices and, briefly, the design and fabrication of a 400 - ampere RMS Transcalent Thyristor, 250 - ampere Rectifier and design objectives of a high power transistor.
Keywords :
heat pipes; semiconductor device packaging; solid-state rectifiers; thermal management (packaging); thyristors; RMS transcalent thyristor; active element; current 250 A; current 400 A; heat pipes; heat rejection surface; high power transistor; mechanical barrier; rectifier; thermal barrier; transcalent solid-state power devices; Heat sinks; Heating; Impedance; Junctions; Rectifiers; Silicon; Thyristors;
Conference_Titel :
Power Electronics Specialists Conference, 1972 IEEE
Conference_Location :
Atlantic City
DOI :
10.1109/PPESC.1972.7094896
