Title :
Recent advance on selective MOVPE technique for photonic integrated circuits
Author :
Sasaki, Tatsuya ; Kudo, Koji ; Tsuji, Masayoshi ; Komatsu, Keiro
Author_Institution :
Optoelectron. Technol. Res. Lab., Tsukuba, Japan
Abstract :
Using the narrow-stripe selective MOVPE technique, high quality InGaAsP-InGaAsP MQW was obtained. Fine selectivity and large bandgap energy shift were also obtained for InGaAs-InAlAs MQW. These results confirm extensive capability of this technique to various photonic integrated circuits (PICs) for advanced optical transmission systems.
Keywords :
energy gap; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical communication equipment; semiconductor growth; vapour phase epitaxial growth; InGaAs-InAlAs; InGaAs-lnAlAs MQW; InGaAsP-InGaAsP; advanced optical transmission systems; fine selectivity; high quality InGaAsP-lnGaAsP MQW; large bandgap energy shift; narrow-stripe selective MOVPE technique; photonic integrated circuits; selective MOVPE technique; Artificial intelligence; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Optical surface waves; Optical waveguides; Photonic band gap; Photonic integrated circuits; Planar waveguides; Quantum well devices;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.571582
