More than 16% solar cells with a new `HIT´ (doped a-Si/nondoped a-Si/crystalline Si) structure

Author

Wakisaka, K. ; Taguchi, M. ; Sawada, T. ; Tanaka, M. ; Matsuyama, T. ; Matsuoka, T. ; Tsuda, S. ; Nakano, S. ; Kishi, Y. ; Kuwano, Y.

Author_Institution

Sanyo Electric Co. Ltd., Osaka, Japan

fYear

1991

fDate

7-11 Oct 1991

Firstpage

887

Abstract

A HIT (heterojunction with intrinsic thin-layer) structure solar cell has been developed. In this structure, a nondoped a-Si thin layer was inserted between a p-type a-Si layer and an n-layer c-Si substrate. The open-circuit voltage and fill factor (FF) were significantly improved in these HIT structure solar cells compared with conventional p/n heterojunction solar cells. The improvement seems to originate in the reduction of backward current density. For higher efficiency, this HIT structure has been applied to textured substrates and achieved an efficiency of 18.1% (1 cm² cell). This efficiency is the highest value reported for a solar cell in which the junction was fabricated at a low temperature (120°C). Application of this structure to the poly-Si thin film will yield a-Si/poly-Si thin-film solar cells of high efficiency

Keywords

amorphous semiconductors; elemental semiconductors; silicon; solar cells; 18.1 percent; HIT structure solar cells; Si solar cells; amorphous semiconductor layer; fill factor; heterojunction with intrinsic thin-layer; n-type substrate; open-circuit voltage; p-type layer; Crystallization; Heterojunctions; Indium tin oxide; Photovoltaic cells; Plasma temperature; Silicon; Sputtering; Substrates; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Conference_Location

Las Vegas, NV

Print_ISBN

0-87942-636-5

Type

conf

DOI

10.1109/PVSC.1991.169337

Filename

169337