Title :
More than 16% solar cells with a new `HIT´ (doped a-Si/nondoped a-Si/crystalline Si) structure
Author :
Wakisaka, K. ; Taguchi, M. ; Sawada, T. ; Tanaka, M. ; Matsuyama, T. ; Matsuoka, T. ; Tsuda, S. ; Nakano, S. ; Kishi, Y. ; Kuwano, Y.
Author_Institution :
Sanyo Electric Co. Ltd., Osaka, Japan
Abstract :
A HIT (heterojunction with intrinsic thin-layer) structure solar cell has been developed. In this structure, a nondoped a-Si thin layer was inserted between a p-type a-Si layer and an n-layer c-Si substrate. The open-circuit voltage and fill factor (FF) were significantly improved in these HIT structure solar cells compared with conventional p/n heterojunction solar cells. The improvement seems to originate in the reduction of backward current density. For higher efficiency, this HIT structure has been applied to textured substrates and achieved an efficiency of 18.1% (1 cm2 cell). This efficiency is the highest value reported for a solar cell in which the junction was fabricated at a low temperature (120°C). Application of this structure to the poly-Si thin film will yield a-Si/poly-Si thin-film solar cells of high efficiency
Keywords :
amorphous semiconductors; elemental semiconductors; silicon; solar cells; 18.1 percent; HIT structure solar cells; Si solar cells; amorphous semiconductor layer; fill factor; heterojunction with intrinsic thin-layer; n-type substrate; open-circuit voltage; p-type layer; Crystallization; Heterojunctions; Indium tin oxide; Photovoltaic cells; Plasma temperature; Silicon; Sputtering; Substrates; Transistors; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169337
