Title :
Growth and analysis of a direct band-gap light-emitting structure on gallium phosphide
Author :
Lee, Jong-Won ; Schremer, Alfred ; Fekete, Dan ; Ballantyne, Joseph
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
Summary form only given. We have grown approximately 20 /spl Aring/ thick InGaP pseudomorphic single quantum well ligh emitting structures of various In compositions on GaP substrate using flow-modulated OMVPE. The photoluminescence from quantum wells of various In compositions are given.
Keywords :
III-V semiconductors; energy gap; gallium compounds; indium compounds; light emitting devices; photoluminescence; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; 20 A; GaP; GaP substrate; In compositions; InGaP; InGaP pseudomorphic single quantum well light emitting structures; direct band-gap light-emitting structure; flow-modulated OMVPE; gallium phosphide; photoluminescence; quantum wells; Charge carrier processes; Composite materials; Electron emission; Gallium compounds; Lattices; Photoluminescence; Photonic band gap; Radiative recombination; Solid modeling; Temperature dependence;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.571585
