The performance of recently developed high voltage high current power transistors

A new generation of planar high voltage, high current transistors has evolved which makes use of new high current density techniques. The resulting transistors have already been made with Collector to Base breakdown voltages of over 1500 volts and Collector to Emitter sustaining (base terminal open circuit) voltages of over 1000 volts. The high current density techniques have permitted current capabilities of 60 amperes, combined with sustaining voltages over 400volts on a single chip transistor.