Reduced thermal cross-talk in angled etched facet individually addressable laser arrays

Author

Francis, Daniel ; Chang-Hasnain, Connie J.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

2

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

134

Abstract

We have fabricated closely spaced (8 /spl mu/m) arrays of non parallel etched facet lasers. We compared the thermal cross-talk of angled lasers with that of parallel stripe lasers with same separation. The angled lasers show less than half the thermal coupling of parallel lasers. Lasers are demonstrated in two different material systems. In InGaAs these lasers produced up to 120 mW/facet with an efficiency of .24 W/A per facet.

Keywords

III-V semiconductors; etching; gallium arsenide; indium compounds; optical crosstalk; semiconductor laser arrays; InGaAs; InGaAs lasers; angled etched facet individually addressable laser arrays; closely spaced arrays; efficiency; non parallel etched facet lasers; parallel lasers; parallel stripe lasers; reduced thermal cross-talk; semiconductor laser arrays; thermal coupling; Diode lasers; Etching; Indium gallium arsenide; Laser theory; Optical arrays; Optical materials; Pump lasers; Semiconductor laser arrays; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.571587

Filename

571587