Title :
Reduced thermal cross-talk in angled etched facet individually addressable laser arrays
Author :
Francis, Daniel ; Chang-Hasnain, Connie J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
We have fabricated closely spaced (8 /spl mu/m) arrays of non parallel etched facet lasers. We compared the thermal cross-talk of angled lasers with that of parallel stripe lasers with same separation. The angled lasers show less than half the thermal coupling of parallel lasers. Lasers are demonstrated in two different material systems. In InGaAs these lasers produced up to 120 mW/facet with an efficiency of .24 W/A per facet.
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; optical crosstalk; semiconductor laser arrays; InGaAs; InGaAs lasers; angled etched facet individually addressable laser arrays; closely spaced arrays; efficiency; non parallel etched facet lasers; parallel lasers; parallel stripe lasers; reduced thermal cross-talk; semiconductor laser arrays; thermal coupling; Diode lasers; Etching; Indium gallium arsenide; Laser theory; Optical arrays; Optical materials; Pump lasers; Semiconductor laser arrays; Silicon; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.571587
