DocumentCode
2545853
Title
High brightness curved-facet laser diodes operating at 980 nm
Author
Braddell, Jules ; O´Brien, P. ; McInerney, J.
Author_Institution
Nat. Microelectron. Res. Centre, Cork, Ireland
Volume
2
fYear
1996
fDate
18-21 Nov. 1996
Firstpage
142
Abstract
Using a novel MOVPE fabrication technique and a weakly guiding waveguide structure high brightness InGaAs-GaAs-AlGaAs laser diodes with a narrow beam waist were produced. These devices were pulse tested and gave a peak output power of 0.58 Watts at 3 Amps with a beam waist of only 11 /spl mu/m.
Keywords
indium compounds; 0.58 W; 11 mum; 3 A; 980 nm; InGaAs-GaAs-AlGaAs; MOVPE fabrication technique; beam waist; high brightness InGaAs-GaAs-AlGaAs laser diodes; high brightness curved-facet laser diodes; narrow beam waist; peak output power; pulse tested; weakly guiding waveguide structure; Artificial intelligence; Brightness; Diode lasers; Etching; Optical pumping; Optical resonators; Power generation; Power measurement; Testing; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-3160-5
Type
conf
DOI
10.1109/LEOS.1996.571591
Filename
571591
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