Title :
Advances in high efficiency CuInSe2 solar cells prepared by the selenization technique
Author :
Basol, Bulent M. ; Kapur, Vijay K. ; Halani, Arvind
Author_Institution :
International Solar Electric Technology, Inglewood, CA, USA
Abstract :
Recent results are reported for 1 cm2 cells with active area efficiencies of 12.4%. The optoelectronic properties of window layers are expected to affect the cell parameters, especially the J sc and series resistance values of ZnO/CdS/CuInSe2 structures. It is demonstrated that in addition to these more conventional effects, the deposition technique used for the CdS film growth also influences the quality of the CdS/CuInSe2 junction which is represented by the diode factor value
Keywords :
II-VI semiconductors; cadmium compounds; copper compounds; indium compounds; optical films; solar cells; ternary semiconductors; zinc compounds; ZnO-CdS-CuInSe2 solar cells; active area efficiencies; cell parameters; diode factor value; optoelectronic properties; selenization technique; semiconductor; series resistance; short-circuit currents; window layers; Absorption; Atmosphere; Chemicals; Glass; Optical films; Photovoltaic cells; Reflectivity; Substrates; Windows; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169338
