DocumentCode
2546029
Title
Exploring carbon nanotubes and NiSi nanowires as on-chip interconnections
Author
Dong, Chen ; Haruehanroengra, Sansiri ; Wang, Wei
Author_Institution
Dept. of Electr. & Comput. Eng., Indiana Univ.
fYear
2006
fDate
21-24 May 2006
Abstract
In this paper, various models of carbon nanotube (CNT) and NiSi nanowire are established and used to analyze their performance as future on-chip interconnections. These theoretical studies and simulation results lead to important new findings: NiSi nanowire has superior properties in terms of effective current density and propagation speed compared to Cu and CNT. These properties make NiSi nanowire the most promising candidate for future on-chip interconnections. Bundle CNT also shows promise for long interconnect applications
Keywords
carbon nanotubes; integrated circuit interconnections; nanowires; nickel compounds; NiSi; carbon nanotubes; current density; nanowires; on-chip interconnections; Carbon nanotubes; Current density; Integrated circuit interconnections; Nanowires; Optical scattering; Particle scattering; Plasma properties; Plasma temperature; Surface resistance; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on
Conference_Location
Island of Kos
Print_ISBN
0-7803-9389-9
Type
conf
DOI
10.1109/ISCAS.2006.1693383
Filename
1693383
Link To Document