• DocumentCode
    2546029
  • Title

    Exploring carbon nanotubes and NiSi nanowires as on-chip interconnections

  • Author

    Dong, Chen ; Haruehanroengra, Sansiri ; Wang, Wei

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Indiana Univ.
  • fYear
    2006
  • fDate
    21-24 May 2006
  • Abstract
    In this paper, various models of carbon nanotube (CNT) and NiSi nanowire are established and used to analyze their performance as future on-chip interconnections. These theoretical studies and simulation results lead to important new findings: NiSi nanowire has superior properties in terms of effective current density and propagation speed compared to Cu and CNT. These properties make NiSi nanowire the most promising candidate for future on-chip interconnections. Bundle CNT also shows promise for long interconnect applications
  • Keywords
    carbon nanotubes; integrated circuit interconnections; nanowires; nickel compounds; NiSi; carbon nanotubes; current density; nanowires; on-chip interconnections; Carbon nanotubes; Current density; Integrated circuit interconnections; Nanowires; Optical scattering; Particle scattering; Plasma properties; Plasma temperature; Surface resistance; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on
  • Conference_Location
    Island of Kos
  • Print_ISBN
    0-7803-9389-9
  • Type

    conf

  • DOI
    10.1109/ISCAS.2006.1693383
  • Filename
    1693383