DocumentCode :
2546029
Title :
Exploring carbon nanotubes and NiSi nanowires as on-chip interconnections
Author :
Dong, Chen ; Haruehanroengra, Sansiri ; Wang, Wei
Author_Institution :
Dept. of Electr. & Comput. Eng., Indiana Univ.
fYear :
2006
fDate :
21-24 May 2006
Abstract :
In this paper, various models of carbon nanotube (CNT) and NiSi nanowire are established and used to analyze their performance as future on-chip interconnections. These theoretical studies and simulation results lead to important new findings: NiSi nanowire has superior properties in terms of effective current density and propagation speed compared to Cu and CNT. These properties make NiSi nanowire the most promising candidate for future on-chip interconnections. Bundle CNT also shows promise for long interconnect applications
Keywords :
carbon nanotubes; integrated circuit interconnections; nanowires; nickel compounds; NiSi; carbon nanotubes; current density; nanowires; on-chip interconnections; Carbon nanotubes; Current density; Integrated circuit interconnections; Nanowires; Optical scattering; Particle scattering; Plasma properties; Plasma temperature; Surface resistance; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on
Conference_Location :
Island of Kos
Print_ISBN :
0-7803-9389-9
Type :
conf
DOI :
10.1109/ISCAS.2006.1693383
Filename :
1693383
Link To Document :
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