Front-end ASIC for high-resolution and high rate CsI(Tl)-Si detectors

Author

D´Andragora, Alessio ; De Geronimo, G. ; Kindem, J. ; Vernon, E.

Author_Institution

Brookhaven Nat. Lab., Upton, NY, USA

fYear

2012

fDate

Oct. 27 2012-Nov. 3 2012

Firstpage

616

Lastpage

619

Abstract

A front-end application specific integrated circuit (ASIC) was designed and fabricated in a commercial 2.5 V 0.25 μm CMOS technology. It was optimized for pixelated CsI(TI)/Si sensors, and it can process signals from 128 anodes. Each channel comprises a low-noise charge amplification stage, high order shaping, and a number of optional processing circuits. The ASIC can operate in three different modes: spectrum (peak- and time-measurement of signals above thresholds), photon counting (counting of signals within an energy window) and current-integrating for very high rate. The ASIC offers, with a CsI(TI)/Si detector connected, a resolution of 86 e^- at 12 μs peaking time, and dissipates about 2.4 mW per channel. The sensitivity of the current-integrating circuit is in the range of 2.6 - 3 m V /fC/kHz.

Keywords

CMOS integrated circuits; anodes; application specific integrated circuits; photon counting; semiconductor counters; CMOS technology; anode; application specific integrated circuit; current integrating circuit; front end ASIC; high order shaping; high rate CsI(TI)-Si detector; high resolution CsI(TI)-Si detector; low noise charge amplification stage; photon counting; time 12 mus; voltage 2.5 V;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012 IEEE

Conference_Location

Anaheim, CA

ISSN

1082-3654

Print_ISBN

978-1-4673-2028-3

Type

conf

DOI

10.1109/NSSMIC.2012.6551181

Filename

6551181