Title :
A low-power, 10GS/s track-and-hold amplifier in SiGe BiCMOS technology
Author :
Borokhovych, Yevgen ; Gustat, Hans ; Tillack, Bernd ; Heinemann, Bernd ; Lu, Yuan ; Kuo, Wei-Min Lance ; Li, Xiangtao ; Krithivasan, Ramkumar ; Cressler, John D.
Author_Institution :
Dept. of Circuit Design, IHP, Frankfurt, Germany
Abstract :
This paper presents a low-power high-speed BiCMOS track-and-hold amplifier (THA). It combines the differential switched-emitter follower of (Vorenkamp and Verdaasdonk, 1992) with the low-droop output buffer presented in (Fiocchi et al., 2000). A test implementation consumes 70 mW of total power (30 mW THA). It works up to 15 GS/s, using minimum-size HBTs in a 0.25μm 200 GHz SiGe BiCMOS technology. At 10 GS/s and an input signal of 1 GHz, the achieved THD corresponds to 6.8 bits accuracy. To our knowledge, the present circuit is by far the fastest THA with low power consumption and high accuracy.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; buffer circuits; harmonic distortion; high-speed integrated circuits; low-power electronics; millimetre wave amplifiers; millimetre wave integrated circuits; sample and hold circuits; semiconductor materials; 0.25 micron; 1 GHz; 200 GHz; 30 mW; 70 mW; HBT circuits; SiGe; SiGe BiCMOS technology; differential switched-emitter follower; high-speed BiCMOS technology; low power consumption; low-droop output buffer; track-and-hold amplifier; Analog-digital conversion; Baseband; BiCMOS integrated circuits; CMOS technology; Circuit synthesis; Circuit testing; Communications technology; Energy consumption; Germanium silicon alloys; Silicon germanium;
Conference_Titel :
Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European
Print_ISBN :
0-7803-9205-1
DOI :
10.1109/ESSCIR.2005.1541610
