Title :
CIS solar cells by elemental sputtering
Author :
Arya, R.R. ; Lommasson, T. ; Fieselmann, B. ; Russell, L. ; Carr, L. ; Catalano, A.
Author_Institution :
Solarex Corp., Newton, PA, USA
Abstract :
The key elements in the development of copper-indium-diselenide (CIS) solar cells are described. This includes material development of the window layer and the absorber layer. The window layer consists of CdS deposited by chemical solution growth and ZnO deposited by LPCVD. The CIS is deposited by sputtering from elemental targets. Films with proper composition and large grains have been deposited. Problems associated with sputtering Se are discussed. Solar cells fabricated on this material have resulted in an active-area conversion efficiency of 6.2%
Keywords :
cadmium compounds; copper compounds; indium compounds; semiconductor growth; solar cells; sputtered coatings; ternary semiconductors; zinc compounds; 6.2 percent; CuInSe2-ZnO-CdS solar cells; LPCVD; absorber layer; chemical solution growth; elemental sputtering; low-pressure chemical vapour deposition; semiconductor; window layer; Chemical elements; Computational Intelligence Society; Copper; Glass; Optical films; Photovoltaic cells; Sputtering; Substrates; Temperature; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169340
