DocumentCode
2546528
Title
A 5.5 V SOPA line driver in a standard 1.2 V 0.13 μm CMOS technology
Author
Serneels, Bert ; Steyaert, Michiel ; Dehaene, Wim
Author_Institution
ESAT-MICAS, KU-Leuven, Leuven, Belgium
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
303
Lastpage
306
Abstract
In this work a high voltage line driver, using a self-oscillating power amplifier (SOPA) in a digital 1.2 V 0.13 μm CMOS technology is presented. A self biasing cascode topology allows the line driver to operate at 4.5 times the nominal supply voltage. Oxide breakdown and hot carrier degradation is minimized since the driver operates within the voltage limits imposed by the design rules of a mainstream CMOS technology. The realized prototype delivers a 35 MHz PWM square wave with a 4.6 V swing in a 7.1 Ω load with an efficiency of 62%. The chip achieves a spurious free dynamic range (SFDR) of 52 dB while driving a 1 MHz sine wave. A missing tone power ratio (MTPR) of 50 dB has been measured for a DMT signal up to 1.1 MHz with a crest factor of 14 dB.
Keywords
CMOS digital integrated circuits; VHF amplifiers; driver circuits; hot carriers; power amplifiers; pulse width modulation; 0.13 micron; 1 MHz; 1.2 V; 35 MHz; 4.6 V; 5.5 V; 7.1 ohm; DMT signal; PWM square wave; crest factor; digital CMOS technology; high voltage line driver; hot carrier degradation; missing tone power ratio; oxide breakdown; self biasing cascode topology; self-oscillating power amplifier; spurious free dynamic range; Breakdown voltage; CMOS technology; Degradation; Driver circuits; Dynamic range; High power amplifiers; Hot carriers; Prototypes; Pulse width modulation; Topology;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European
Print_ISBN
0-7803-9205-1
Type
conf
DOI
10.1109/ESSCIR.2005.1541620
Filename
1541620
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