SOI four-gate transistors (G4-FETs) for high voltage analog applications

A new approach for high-voltage analog applications that utilizes SOI four-gate transistors (G⁴-FETs) is presented. The proposed solution achieves high-voltage operation (10 V and higher) with no additional cost of fabrication (compatible with standard SOI) and minimal added design overhead compared to their MOSFET counterparts. Measurement results of high-voltage current mirrors and differential pairs show superior HV capability with small signal performance comparable to their MOSFET counterparts. By using the high-voltage current mirror and differential pair as basic building blocks, a differential amplifier is built and tested with a 20 V supply.