Title :
A compact Ka-band SPDT switch with high isolation
Author :
Chao Liu ; Qiang Li ; Yong-Zhong Xiong
Author_Institution :
Univ. of Electron. Sci. & Technol., Chengdu, China
Abstract :
This paper presents a Ka-band high isolation single-pole-double-throw (SPDT) switch using 0.13 μm CMOS process. The switch has a measured insertion loss of 2.7-3.7 dB and an input 1-dB compression power (P1dB) of 8 dBm at 35 GHz. Via using the shunt NMOS topology and high quality factor match networks, 33-50 dB measured isolation is obtained within the frequency range of 30-45 GHz. The switch core occupies 160×180 μm2 chip area.
Keywords :
CMOS integrated circuits; Q-factor; field effect MIMIC; field effect MMIC; microwave switches; CMOS process; compact Ka-band SPDT switch; frequency 30 GHz to 45 GHz; high quality factor match networks; input compression power; loss 2.7 dB to 3.7 dB; loss 33 dB to 50 dB; shunt NMOS topology; single-pole-double-throw switch; size 0.13 mum; Inductors; Integrated circuit modeling; Loss measurement; MOSFET; Switches; Switching circuits; CMOS; Ka-band; SPDT; T/R switch; high isolation;
Conference_Titel :
Integrated Circuits (ISIC), 2014 14th International Symposium on
Conference_Location :
Singapore
DOI :
10.1109/ISICIR.2014.7029563
