A 150-GHz push-push VCO in 0.13-μm SiGe BiCMOS

This paper presents a 150-GHz push-push voltage-controlled oscillator (VCO) in 0.13-μm SiGe BiCMOS process. The VCO generates the D-band output signals from 147.4 to 152.4 GHz. At 150 GHz, the simulated phase noise at 1- and 10-MHz offset frequencies are respectively -67 dBc/Hz and -93.5 dBc/Hz and the simulated output power is -21 dBm with a 50 Ω load. The VCO draws a current of 3.93 mA from a 2.2 V supply voltage; Small chip size of the VCO including all testing pads is only 368 × 392 μm². The VCO can be used as the individual block or building block in phase-locked loop (PLL) for D-band applications.