• DocumentCode
    2547112
  • Title

    Phase noise analysis and design of a 3-GHz bipolar differential colpitts VCO

  • Author

    Wang, Xiaoyan ; Fard, Ali ; Andreani, Pietro

  • Author_Institution
    Infineon Technol. AG, Munich, Germany
  • fYear
    2005
  • fDate
    12-16 Sept. 2005
  • Firstpage
    391
  • Lastpage
    394
  • Abstract
    This paper presents a low-phase-noise differential bipolar Colpitts VCO, implemented in a 0.35μm BiCMOS process. A time-variant phase noise analysis yields closed- form symbolic expressions for the dominant noise sources in the 1/f2 phase-noise region. Measurements show a phase noise of -123 dBc/Hz at 1MHz offset from a 2.8-3.1 GHz carrier, for a figure-of-merit of 183 dBc/Hz. A very good agreement between the derived theoretical formulas, spectreRF simulations, and measurements is observed.
  • Keywords
    BiCMOS integrated circuits; bipolar integrated circuits; integrated circuit noise; microwave oscillators; random noise; voltage-controlled oscillators; 0.35 micron; 1 MHz; 2.8 to 3.1 GHz; BiCMOS process; bipolar differential colpitts VCO; dominant noise sources; phase-noise region; spectreRF simulations; time-variant phase noise analysis; voltage controlled oscillator; Chromium; Inductors; Noise generators; Noise measurement; Phase measurement; Phase noise; Radio frequency; Topology; Voltage; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European
  • Print_ISBN
    0-7803-9205-1
  • Type

    conf

  • DOI
    10.1109/ESSCIR.2005.1541642
  • Filename
    1541642