Title :
A back-to-back horn-antenna quasi-optical amplifier
Author :
Chi, C.-Y. ; Rebeiz, G.M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
June 28 1993-July 2 1993
Abstract :
A quasi-optical amplifier suitable for Gaussian-beam applications is presented. The amplifier is based on the integrated horn antenna and uses polarization duplexing to isolate the output beam from the input beam. A prototype hybrid amplifier with a measured gain of 10.6 dB at 6 GHz is reported. The amplifier design is uniplanar and compact, and is compatible with the fabrication process of high electron mobility transistors (HEMTs) at millimeter-wave frequencies. The design is single-moded and therefore can be used in existing mm-wave systems as a low-noise amplifier stage before the RF mixer or as an amplifier stage in the transmitting circuit.<>
Keywords :
high electron mobility transistors; horn antennas; microwave amplifiers; millimetre wave field effect transistors; 10.6 dB; 6 GHz; HEMTs; amplifier design; high electron mobility transistors; hybrid amplifier; integrated horn antenna; low-noise amplifier stage; polarization duplexing; quasi-optical amplifier; Antenna measurements; Gain measurement; Gaussian processes; HEMTs; Horn antennas; Low-noise amplifiers; MODFETs; Polarization; Prototypes; Radiofrequency amplifiers;
Conference_Titel :
Antennas and Propagation Society International Symposium, 1993. AP-S. Digest
Conference_Location :
Ann Arbor, MI, USA
Print_ISBN :
0-7803-1246-5
DOI :
10.1109/APS.1993.385260
