• DocumentCode
    2547597
  • Title

    Diode analysis of CuInSe2 solar cells

  • Author

    Shafarman, W.N. ; Phillips, J.E.

  • Author_Institution
    Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    934
  • Abstract
    Analysis of the J-V characteristics of CuInSe 2/(CdZn)S cells have been used to examine the role of different current mechanisms in the device. No evidence was found for interface recombination or other mechanisms, although interface recombination is expected to limit Voc to ~0.52 V. The light intensity dependence was examined, and it is shown that the diode quality factor, reverse saturation current density, and shunt conductance all vary with the intensity. Ways to improve Voc are discussed
  • Keywords
    II-VI semiconductors; cadmium compounds; copper compounds; indium compounds; solar cells; ternary semiconductors; zinc compounds; CuInSe2-Cd1-xZnxS solar cells; J-V characteristics; diode analysis; diode quality factor; interface recombination; light intensity dependence; reverse saturation current density; semiconductor; shunt conductance; Data analysis; Equations; Interface states; Lighting; Photonic band gap; Photovoltaic cells; Q factor; Radiative recombination; Semiconductor diodes; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169346
  • Filename
    169346
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2547597