Title :
Diode analysis of CuInSe2 solar cells
Author :
Shafarman, W.N. ; Phillips, J.E.
Author_Institution :
Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
Abstract :
Analysis of the J-V characteristics of CuInSe 2/(CdZn)S cells have been used to examine the role of different current mechanisms in the device. No evidence was found for interface recombination or other mechanisms, although interface recombination is expected to limit Voc to ~0.52 V. The light intensity dependence was examined, and it is shown that the diode quality factor, reverse saturation current density, and shunt conductance all vary with the intensity. Ways to improve Voc are discussed
Keywords :
II-VI semiconductors; cadmium compounds; copper compounds; indium compounds; solar cells; ternary semiconductors; zinc compounds; CuInSe2-Cd1-xZnxS solar cells; J-V characteristics; diode analysis; diode quality factor; interface recombination; light intensity dependence; reverse saturation current density; semiconductor; shunt conductance; Data analysis; Equations; Interface states; Lighting; Photonic band gap; Photovoltaic cells; Q factor; Radiative recombination; Semiconductor diodes; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169346
