Cavity backed printed dipole arrays with substrate mode control using via-hole technology

An efficient planar antenna structure is investigated which is compatible with high-speed solid-state devices. The antenna consists of a cavity-backed strip-dipole printed on a Si or GaAs wafer. The cavity behind the dipole can either be a rectangular machined cavity or a pyramidal cavity which is anisotropically etched in silicon and metallized with gold. Numerical results are presented for an element of aperture size 0.6/spl lambda/-square printed on a GaAs wafer of thickness 0.15 dielectric wavelengths. The backing cavity is assumed to be anisotropically etched in silicon and therefore its flare angle is fixed to 70/spl deg/.<>