DocumentCode :
2548009
Title :
Large area CdS/CdTe solar cells
Author :
Arita, T. ; Hanafusa, A. ; Kitamura, S. ; Takakura, Hiroki ; Murozono, M.
Author_Institution :
Matsushita Battery Ind. Co. Ltd., Osaka, Japan
fYear :
1991
fDate :
7-11 Oct 1991
Firstpage :
946
Abstract :
A deposition technique, called the writing method, is developed and applied to the fabrication of CdS window layer in CdS/CdTe solar cells produced by the screen-printing and sintering method. Obtained CdS film is quite smooth with very few pinholes. It is proved that this technique possesses high patterning precision. Furthermore, heat treatment of glass/CdS/CdTe substrates in H2+N2 atmosphere decreases the sheet resistance of CdS film by about one order of magnitude. High-precision patterning ability and low sheet resistivity of CdS window realize high active/total area ratio of more than 0.8. As a result of these improvements, the conversion efficiency of 8.1% in 1200 cm2 (10.1% active area efficiency) is obtained
Keywords :
II-VI semiconductors; cadmium compounds; sintering; solar cells; 10.1 percent; 8.1 percent; CdS-CdTe solar cells; active/total area ratio; deposition technique; glass substrate; heat treatment; high patterning precision; screen-printing; sheet resistance; sheet resistivity; sintering; window layer fabrication; writing method; Atmosphere; Conductivity; Fabrication; Glass; Heat treatment; Photovoltaic cells; Resistance heating; Substrates; Windows; Writing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
Type :
conf
DOI :
10.1109/PVSC.1991.169348
Filename :
169348
Link To Document :
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