• DocumentCode
    2548009
  • Title

    Large area CdS/CdTe solar cells

  • Author

    Arita, T. ; Hanafusa, A. ; Kitamura, S. ; Takakura, Hiroki ; Murozono, M.

  • Author_Institution
    Matsushita Battery Ind. Co. Ltd., Osaka, Japan
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    946
  • Abstract
    A deposition technique, called the writing method, is developed and applied to the fabrication of CdS window layer in CdS/CdTe solar cells produced by the screen-printing and sintering method. Obtained CdS film is quite smooth with very few pinholes. It is proved that this technique possesses high patterning precision. Furthermore, heat treatment of glass/CdS/CdTe substrates in H2+N2 atmosphere decreases the sheet resistance of CdS film by about one order of magnitude. High-precision patterning ability and low sheet resistivity of CdS window realize high active/total area ratio of more than 0.8. As a result of these improvements, the conversion efficiency of 8.1% in 1200 cm2 (10.1% active area efficiency) is obtained
  • Keywords
    II-VI semiconductors; cadmium compounds; sintering; solar cells; 10.1 percent; 8.1 percent; CdS-CdTe solar cells; active/total area ratio; deposition technique; glass substrate; heat treatment; high patterning precision; screen-printing; sheet resistance; sheet resistivity; sintering; window layer fabrication; writing method; Atmosphere; Conductivity; Fabrication; Glass; Heat treatment; Photovoltaic cells; Resistance heating; Substrates; Windows; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169348
  • Filename
    169348