• DocumentCode
    2548957
  • Title

    Diamond and cubic boron nitride: synthesis and electronic applications

  • Author

    Bello, I. ; Zhang, W.J. ; Chan, K.M. ; Chan, C.Y. ; Wu, Y. ; Meng, Fanman ; Lam, C.W. ; Liu, J. ; Luk, W.Y.

  • Author_Institution
    Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, Kowloon, China
  • fYear
    2002
  • fDate
    14-16 Oct. 2002
  • Firstpage
    1
  • Lastpage
    11
  • Abstract
    This paper reviews recent progress in the deposition of diamond and cubic boron nitride (cBN) films. It aims at the effort of preparing smooth surfaces, improving crystallinity and enhancing adhesion of diamond and cBN films. The properties of these materials, multi-stage growth processes and difference in synthesis of diamond and cBN films are discussed. Resolving the nucleation and growth stages, deposition at different temperatures, post deposition treatment, possible chemistry, and the mechanisms behind are introduced as well. We report the most striking results achieved in our laboratories including the deposition of thin smooth oriented diamond film with coalescent diamond crystals and the deposition of thick cubic boron nitride films yielding well-resolved Raman spectra. The difference between the syntheses of polycrystalline and nano-crystalline diamond films are shown to be in gas phase environments. While the CH3 radicals are responsible for the growth of polycrystalline films the CVD environment with abundant C2 dimers results in the deposition of nanocrystalline diamond. Special attention deserves manufacturing single crystal diamond nanotips and their arrays. These single crystal diamond nano-lips have a very high aspect ratio, an apical angle of 28° and a radius of 5 nm. Finally, we present a review of potential and current applications of diamond in electronic areas.
  • Keywords
    III-V semiconductors; Raman spectra; adhesion; boron compounds; chemical vapour deposition; diamond; elemental semiconductors; nanostructured materials; nanotechnology; nucleation; reviews; semiconductor growth; semiconductor thin films; surface topography; wide band gap semiconductors; 5 nm; BN; C; C2 dimers; CH3 radicals; CVD; Raman spectra; adhesion; apical angle; arrays; chemistry; coalescent diamond crystals; crystallinity; cubic boron nitride; deposition; diamond; electronic applications; growth; high aspect ratio; multi-stage growth process; nano-crystalline diamond films; nucleation; post deposition treatment; reviews; single crystal diamond nanotips; smooth surfaces; synthesis; thin smooth oriented diamond film; Adhesives; Boron; Chemistry; Crystalline materials; Crystallization; Crystals; Laboratories; Manufacturing; Surface treatment; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
  • Print_ISBN
    0-7803-7276-X
  • Type

    conf

  • DOI
    10.1109/ASDAM.2002.1088463
  • Filename
    1088463